论文标题
三元完整加法器的全面调查:统计,更正和评估
Comprehensive Survey of Ternary Full Adders: Statistics, Corrections, and Assessments
论文作者
论文摘要
三元添加剂的历史可以追溯到六十多年前。从那时起,文献中已经介绍了许多三元完整加法器(TFA)。本文对TFA进行了审查,以便可以熟悉所使用的设计方法及其流行率。而且,尽管有许多TFA,但几乎没有一个以最简单的形式。可以通过考虑部分TFA而不是完整的TFA来消除大量晶体管。根据我们的调查,只有28.6%的先前设计是部分TFA。同样,通过假设部分TFA的输出电压为0V或VDD,可以进一步简化它们。这样,在单VDD设计中,将消除随身携带的发电机部分内部的电压划分,并且功率消散较少。就我们搜索而言,文献中只有三个部分TFA具有这种有利的状况。此外,以前文章中的大多数仿真设置都不够现实。因此,在这些论文中报告的仿真结果既不可比也不完全有效。因此,我们有动力进行调查,详细介绍此问题,并增强以前的一些设计。在84篇论文中,在本文中选择,简化和模拟了10种不同的TFA(来自11篇论文)。 HSPICE和32NM CNFET技术的仿真结果表明,简化的部分TFA在延迟,功率和晶体管数方面优于其原始版本。
The history of ternary adders goes back to more than six decades ago. Since then, a multitude of ternary full adders (TFAs) have been presented in the literature. This paper conducts a review of TFAs so that one can be familiar with the utilized design methodologies and their prevalence. Moreover, despite numerous TFAs, almost none of them are in their simplest form. A large number of transistors could have been eliminated by considering a partial TFA instead of a complete one. According to our investigation, only 28.6% of the previous designs are partial TFAs. Also, they could have been simplified even further by assuming a partial TFA with an output carry voltage of 0V or VDD. This way, in a single-VDD design, voltage division inside the Carry generator part would have been eliminated and less power dissipated. As far as we have searched, there are only three partial TFAs with this favorable condition in the literature. Additionally, most of the simulation setups in the previous articles are not realistic enough. Therefore, the simulation results reported in these papers are neither comparable nor entirely valid. Therefore, we got motivated to conduct a survey, elaborate on this issue, and enhance some of the previous designs. Among 84 papers, 10 different TFAs (from 11 papers) are selected, simplified, and simulated in this paper. Simulation results by HSPICE and 32nm CNFET technology reveal that the simplified partial TFAs outperform their original versions in terms of delay, power, and transistor count.