论文标题
部分可观测时空混沌系统的无模型预测
Scattering anisotropy in HgTe (013) quantum well
论文作者
论文摘要
我们报告了HGTE（013）量子的电子传输各向异性的详细实验研究，该量子在方向$ [100] $和$ [03 \ bar {1}] $的宽度为22 nm，作为电子密度$ n $的功能。在电荷中性点附近的最小电子密度下不存在各向异性。当费米水平在第一个子带H1之内时，各向异性随着n的增加而增加，并达到约10％。当费米水平达到第二个子带E2时，各向异性急剧增加（高达60％）。我们得出的结论是，第一个效果是由于较小的叠式各向异性界面粗糙度散射引起的，第二个效果是由于强烈的各向异性跨带之间的粗糙度散射引起的，但是在各向异性上发生这种巨大变化的显微镜原因仍然不明。
We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown.
