论文标题
一个用于新兴开关技术的高压表征平台
A High-Voltage Characterisation Platform For Emerging Resistive Switching Technologies
论文作者
论文摘要
由于存储信息的密度，可扩展性和能力，因此有效地用于非易失性记忆和神经形态计算系统中，基于新兴的备忘录阵列体系结构已被有效地使用。尽管如此，为了证明一种实用的基于芯片的备忘录系统，必须在各种Memristor Technologies的表征过程中具有大型编程电压范围的能力。这项工作提出了使用高压CMOS电路的16x16高电压回忆表征阵列。拟议的系统的最大编程范围为$ \ pm22v $，可允许芯片电动型和I-V扫描。此外，还实施了开尔文电压传感系统，以提高低膜测量值的读数准确性。这项工作解决了传统的CMOS-Memristor平台的局限性，该平台只能在低压下运行，从而限制了Memristor Technologies的表征范围和集成选项。
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of $\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies.
