论文标题
pbte Quantum Dots中的大型偶数间距和$ g $ -FACTOR各向异性
Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
论文作者
论文摘要
PBTE是一种半导体，具有拓扑量子计算应用的有前途的特性。在这里，我们在INP上有选择地生长的PBTE纳米线中的量子点。零磁场的电荷稳定性图显示了库仑封锁峰之间的大均匀间距，在140 $〜\ mathrm {μev} $和奇数库仑钻石中充电的能量和kondo峰。我们将较大的偶数间距归因于较大的介电常数和小有效的PBTE电子质量。通过研究Zeeman诱导的水平和在有限磁场中的近托分裂，我们提取电子$ g $ - 因子作为磁场方向的函数。我们发现$ g $ -FACTOR张量是高度各向异性的，主$ G $ -FACTOR的范围从0.9到22.4不等，并且取决于设备的电子配置。这些结果表明我们的PBTE量子点中的Rashba自旋轨道相互作用很强。
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.
