论文标题
微秒的非融合紫外线激光退火，用于未来的3D堆叠CMO
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
论文作者
论文摘要
三维（3D）CMOS技术鼓励使用紫外线激光退火（UV-LA），因为将紫外线吸收到材料中，而工艺时间尺度通常从纳米秒（NS）到微秒到微秒（美国）极大地限制了垂直热量。在这项工作中，美国UV-LA固相外延再生（SPER）在砷离子植入的硅 - 在底物底物中表现出活跃的载体浓度，超过1 x 10^21 at./cm^-3。在随后以改善CMOS互连而闻名的NS UV-LA之后，仅观察到略有（约5％）的板耐性增加。结果开辟了可能在3D堆叠CMO的不同阶段集成UV-LA的可能性。
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit the vertical heat diffusion. In this work, us UV-LA solid phase epitaxial regrowth (SPER) demonstrated an active carrier concentration surpassing 1 x 10^21 at./cm^-3 in an arsenic ion-implanted silicon-on-insulator substrate. After the subsequent ns UV-LA known for improving CMOS interconnect, only a slight (about 5%) sheet resistance increase was observed. The results open a possibility to integrate UV-LA at different stages of 3D-stacked CMOS.
