论文标题
钼钼的带结构:从第一原理到分析带模型
Band structure of molybdenum disulfide: from first principle to analytical band model
论文作者
论文摘要
一个简单的带模型(例如有效质量近似(EMA))可用于快速获取单层钼二硫化物的带状结构的低能量区域。但是EMA频带模型无法对高能区域中的频带结构提供正确的描述。为了解决这一主要问题,我们提出了一个分析带计算(ABC)模型来研究单层钼。 ABC模型的重要参数是通过拟合从第一原理(FP)方法获得的单层钼二硫化物的三个方向带结构获得的。所提出的ABC模型与单层钼二硫化物的FP谱带结构计算结果非常吻合。我们还使用ABC模型来计算载体运输中使用的物理量,例如状态的密度和组速度。我们的ABC模型可以扩展并进一步用于计算2D半导体材料的弹道传输的关键物理量。
A simple band model such as the effective mass approximation (EMA) can be used to quickly obtain the lower-energy region for the band structure of monolayer molybdenum disulfide. But the EMA band model cannot give the correct description for the band structure in the higher-energy region. To address this major issue, we propose an analytical band calculation (ABC) model to study monolayer molybdenum disulfide. Important parameters of the ABC model are obtained by fitting the three-direction band structure of monolayer molybdenum disulfide obtained from the first-principles (FP) method. The proposed ABC model fits well with the FP band structure calculation result for monolayer molybdenum disulfide. We also use the ABC model to calculate physical quantities used in carrier transport such as density of states and group velocity. Our ABC model can be extended and further utilized for calculating the key physical quantities of ballistic transport of 2D semiconductor materials.