论文标题
表面状态在BI0.85SB0.15拓扑单晶体中诱导弱反定位效应
Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal
论文作者
论文摘要
我们报告是在BI0.85SB0.15单晶中表面状态（SS）驱动的磁通磁管的实验证据。在研究的BI0.85SB0.15单晶上进行了详细的高场（最高12T）和低温（低温至2K）磁电机测量。通过X射线衍射，能量分散X射线和拉曼光谱研究了相，组成和拉曼模式。获得的晶体在2k和12t时显示出非饱和磁磁性（4250％），以及在零磁场附近的弱抗抗位置（WAL）的存在。此外，进行了Hikami-Larkin-Nagaoka（HLN）分析以分析WAL效应。预替代和相干长度在各种温度下推断出来，这表明在研究的BI0.85SB0.15单晶中存在多个传导通道。通过在SS驱动的HLN方程中添加各种依赖性二次，线性和常数项，研究了量子散射的影响，表面状态下方的大量贡献和缺陷的效果。通过分析相干长度的温度依赖性来研究各种可能的散射机制。所研究的BI0.85SB0.15单晶的角度依赖性磁导率清楚地证实了当前晶体中占主导地位的转运。
We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi0.85Sb0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2K) magneto-transport measurements are been carried out on the studied Bi0.85Sb0.15 single crystal. The phase, composition and Raman modes are studied through X-ray diffraction, Energy dispersive X-ray, and Raman spectroscopy. The obtained crystal shows non-saturating magnetoresistance (4250%) at 2K and 12T, along with the existence of weak-anti localization (WAL) effect at around zero magnetic field. Further, the Hikami-Larkin-Nagaoka (HLN) analysis is performed to analyse the WAL effect. The prefactor and phase coherence length are deduced at various temperatures, which signified the presence of more than one conduction channel in the studied Bi0.85Sb0.15 single crystal. The effect of quantum scattering, bulk contribution from underneath the surface states and defects are been studied by adding various field dependent quadratic, linear and constant terms to the SS driven HLN equation. Various possible scattering mechanism are studied by analysing the temperature dependence of the phase coherence length. Angle dependent magneto-conductivity of the studied Bi0.85Sb0.15 single crystal clearly confirmed the surface states dominated transport in present crystal.
