论文标题
3T-1R模拟写作和MRAM的RNG和低功率内存应用程序的数字读取
3T-1R Analog Write and Digital Read of MRAM for RNG and Low Power Memory Application
论文作者
论文摘要
这项工作代表了MTJ与30nm FinFET的集成，用于低压模拟写入操作以及对P-BIT或真实随机数发生器（TRNG）的读数优化，其中仅在单个计算周期内检测到诱导的P-BIT（诱导的P-BIT），磁性隧道连接（MTJ）的概率状态。该期间包含两个子伴侣：写入并连接了阅读和重置周期。在所需的工作点校准因因子，可以诱导信号偏差，例如温度，材料降解或外部磁场。
This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic tunnel junction (MTJ), is detected within only a single computational period. The period contains two sub-cycles: write and joined read & reset cycles. The operation with MTJ becomes stochastic, independent after calibrating at the desired working point against the factors, which can induce the signal deviations, e.g. temperature, material degradation or external magnetic field.
