论文标题
多效半导体（GE，MN）TE中的非肾脏电气传输
Nonreciprocal electrical transport in multiferroic semiconductor (Ge,Mn)Te
论文作者
论文摘要
我们已经研究了非近环性电运转运，这是在多效Rashba半导体（GE，MN）TE中取决于当前方向的非线性抗性效应。由于铁磁和铁电订单的共存，（GE，MN）TE提供了一个独特的平台，用于探索以大量形式探索非偏置电气传输。 （GE，MN）TE薄膜显示出与具有相同晶体结构的非磁性对应物Gete相比，具有较大的非偏置耐药性。与对称的论点一致时，当磁场与电流和电极偏振均正交时，非偏置电阻的磁场角度依赖性最大化。根据温度和磁场依赖性的分析，我们推断出由镁介导的电子的非弹性散射显着有助于观察到的非邻次反应。此外，通过降低孔密度可显着增强非偏置电阻。费米水平的依赖性归因于Rashba带的变形，在这种变形中，Spin Momentum锁定的单个费米表面从平面磁化值中通过交换场出现。本研究提供了对由半导体中铁电和铁磁阶的相互作用引起的新型运输现象机制的关键见解。
We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal resistance compared to GeTe, the nonmagnetic counterpart with the same crystal structure. The magnetic-field-angle dependence of the nonreciprocal resistance is maximized when magnetic field is orthogonal to both current and electric polarization, in accord with the symmetry argument. From the analysis of temperature and magnetic field dependence, we deduce that inelastic scatterings of electrons mediated by magnons dominantly contribute to the observed nonreciprocal response. Furthermore, the nonreciprocal resistance is significantly enhanced by lowering hole density. The Fermi level dependence is attributed to the deformation of the Rashba band in which the spin-momentum locked single Fermi surface appears by exchange field from the in-plane magnetization. The present study provides a key insight to the mechanisms of novel transport phenomena caused by the interplay of ferroelectric and ferromagnetic orders in a semiconductor.
