论文标题
超高频率低损失的塞沙瓦模式在gan/sic平台上看到设备
Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
论文作者
论文摘要
本文对Swegan Quanfine Ultrathin Gan/SIC平台中塞沙瓦表面声波（SAW）设备的性能进行了全面研究，首次达到14 GHz以上的频率。由于消除了外延gan技术中通常存在的厚缓冲层，因此实现了塞沙瓦模式频率缩放。首先执行有限元分析（FEA），以找到在生长结构中支持Sezawa模式的频率范围。设计，制造和表征的是用跨数字传感器（IDT）驱动的传输线和共振腔。为每类设备开发了修改的梅森电路模型，以提取关键的性能指标。我们观察到相位速度（VP）的测量和模拟分散与压电耦合系数（k^2）之间存在很强的相关性。 Sezawa共振器的最大k^2的最大k^2和频率质量因子产物（F.QM）为11 GHz，在11 GHz中获得了最小的k^2，最小传播损失为两端口设备的最小传播损失为0.26 dB/波长。在跨越14.3 GHz的频率下观察到塞沙瓦模式，达到了GAN微电力系统（MEMS）的创纪录，从而达到了作者的最佳知识。
This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved due to the elimination of the thick buffer layer typically present in epitaxial GaN technology. Finite element analysis (FEA) is first performed to find the range of frequencies over which the Sezawa mode is supported in the grown structure. Transmission lines and resonance cavities driven with Interdigital Transducers (IDTs) are designed, fabricated, and characterized. Modified Mason circuit models are developed for each class of devices to extract critical performance metrics. We observe a strong correlation between measured and simulated dispersion of the phase velocity (vp) and piezoelectric coupling coefficient (k^2). Maximum k^2 of 0.61% and frequency-quality factor product (f.Qm) of 6x10^12 1/s are achieved for Sezawa resonators at 11 GHz, with a minimum propagation loss of 0.26 dB/wavelength for the two-port devices. Sezawa modes are observed at frequencies spanning up to 14.3 GHz, achieving a record high in GaN microelectromechanical systems (MEMS) to the best of the authors' knowledge.
