论文标题
Ab-Initio研究铁磁体/氧化物多层的磁离子机制
Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers
论文作者
论文摘要
栅极电压在重金属/铁磁/氧化物多层堆栈中的应用已被确定为一种可能随意操纵其各向异性的候选者。但是，这种方法已证明可以在可逆性方面显示出多种行为，具体取决于金属/氧化物界面的性质及其氧化程度。为了阐明$ \ text {ta/cofeb/} \ text {hfo} _2 $中的复杂磁离子行为的显微镜机制，我们在各种设置上执行ab-initio模拟，这些设置包含$ \ text {fe/o，fe/o，fe/o，o，fe/hfo} _2 $ interf interf interf interf interf。确定更稳定的界面构型后，我们计算了不同单位细胞配置上的磁各向异性能量，并制定了一种可能的机制，该机制很好地描述了$ \ text {ta/cofeb/} \ text \ text {hfo} {hfo} {hfo}} _2 $ _2 $中的最新实验观察结果。
The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$.
