论文标题
平方薄膜中的模板和温度控制的多晶型物形成
Template and Temperature Controlled Polymorph Formation in Squaraine Thin Films
论文作者
论文摘要
通过选择底物和沉积温度来控制有机半导体薄膜中的多晶型形成是目标设备性能的关键因素。小分子半导体,例如四极供体供应剂 - 唐纳(D-A-D)型Squaraine化合物,允许溶液和蒸气相沉积方法。具有分支的丁基链作为末端功能化(SQIB)的典型的Anilino Squaraine,由于其在可见的深度光谱范围内的广泛吸收而被考虑用于光伏应用。它的光电特性取决于采用单斜晶和正骨晶体的两个已知多晶型物的形成。这两个阶段都具有强烈的平面外,并且根据随后的热退火而定于固定薄膜中的平面内向。在介电和导电底物(例如二氧化硅,氯化钾,石墨烯和金)上沉积的蒸气沉积后,多晶型物表达取决于生长底物的选择。在所有情况下,都采用相同的平面外向取向,但在晶体底物的情况下,表面均采用了平面内对齐。结合X射线衍射,原子力显微镜,椭圆法和偏振光显微镜,我们确定了晶体相的依赖性演化,将质感SQIB膜中的形态和分子取向相关。
Controlling the polymorph formation in organic semiconductor thin films by the choice of substrate and deposition temperature is a key factor for targeted device performance. Small molecular semiconductors such as the quadrupolar donor-acceptor-donor (D-A-D) type squaraine compounds allow both solution and vapor phase deposition methods. A prototypical anilino squaraine with branched butyl chains as terminal functionalization (SQIB) has been considered for photovoltaic applications due to its broad absorption within the visible to deep-red spectral range. Its opto-electronic properties depend on the formation of the two known polymorphs adopting a monoclinic and orthorhombic crystal phase. Both phases emerge with a strongly preferred out-of-plane and rather random in-plane orientation in spincasted thin films depending on subsequent thermal annealing. Upon vapor deposition on dielectric and conductive substrates, such as silicon dioxide, potassium chloride, graphene and gold, the polymorph expression depends on the choice of growth substrate. In all cases the same pronounced out-of-plane orientation is adopted, but with a surface templated in-plane alignment in case of crystalline substrates. Combining X-ray diffraction, atomic force microscopy, ellipsometry and polarized spectro-microscopy we identify the processing dependent evolution of the crystal phases, correlating morphology and molecular orientations within the textured SQIB films.