论文标题
由电场控制的中心对称抗铁磁铁中的zeeman效应
Zeeman effect in centrosymmetric antiferromagnets controlled by an electric field
论文作者
论文摘要
中心对称性抗铁磁半导体虽然自然界丰富，但似乎比铁磁体和铁电磁铁在半导体纺纱剂中的实际应用不那么有前途。事实上，缺乏自发极化和磁化会阻碍这些材料中电子自旋的有效利用。在这里，我们提出了一个范式，以通过电子能级的zeeman自旋分裂（称为旋转Zeeman效应）在中心对称抗fiferromagnets中进行电子自旋。该分裂由电场控制。By对称性分析，我们确定了二十一种中心对称抗铁磁性点基团，可适应这种旋转式旋转效应。我们进一步预测，第一原则是两个反铁磁性半导体，fe $ _2 $ _2 $ teo $ _6 $和srfe $ _2 $ s $ _2 $ o，是出色的候选人，展示了Zeeman splittings，分别是$ $ \ $ \ $ \ sim $ 55和$ \ sim $ \ sim $ 30 mev，分别由电气录制为6 mv/c。此外，可以通过逆转电场来切换与分裂能级相关的电子自旋磁化。因此，我们的工作阐明了反铁磁体中电子自旋的电场控制，这扩大了中心对称抗磁性半导体的应用范围。
Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splittings of electronic energy levels -- termed as spin Zeeman effect -- which is controlled by electric field.By symmetry analysis, we identify twenty-one centrosymmetric antiferromagnetic point groups that accommodate such a spin Zeeman effect. We further predict by first-principles that two antiferromagnetic semiconductors, Fe$_2$TeO$_6$ and SrFe$_2$S$_2$O, are excellent candidates showcasing Zeeman splittings as large as $\sim$55 and $\sim$30 meV, respectively, induced by an electric field of 6 MV/cm. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our work thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors.
