论文标题
关于光致发光和室温旋转极化的存在
On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers
论文作者
论文摘要
Opto-Spintronics是一个新兴领域，其中具有高自旋 - 瓦利耦合的超薄磁性磁导体起着重要作用。在这里，我们在MOS $ _2 $晶格中表现出替代性钒（V）在不同程度上，导致光致发光（PL），瓣膜化（〜32％）和Valley拆卸（〜28 MEV与LESICITY $ fip lenicity $σ^+$ c $σ^+$σ^ - $ filed tlib Light of Light Excitation）的共存（〜28 MEV移动）。一个大的V掺杂导致半导体在MOS $ _2 $中导致金属转变，但中等水平会导致具有高自旋极化的光致发光。这里显示了中等水平V掺杂MOS $ _2 $的双极性质，表明其潜力作为光电材料。 V-掺杂剂的存在及其不同水平的含量通过光谱和微观方法证明。详细的温度和功率依赖性的光致发光研究以及基于密度的基于功能理论的计算，可以揭示Spin-Valley偶联和光照明的共存的出现。这项研究表明，掺杂Mos $ _2 $的潜力用于为下一代室温光旋转的新材料开发新材料。
Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.
