论文标题
在电信波长处的薄膜锂硅锂丝状液液中的脉冲脉冲挤压
Picosecond Pulsed Squeezing in Thin-Film Lithium Niobate Strip-Loaded Waveguides at Telecommunication Wavelengths
论文作者
论文摘要
在提供集成和稳定性的平台中，达到高水平的脉冲挤压是对连续变化的量子信息处理的关键要求。通常，使用狭窄的带光腔和块状晶体实现高度挤压状态，从而限制可伸缩性。使用集成的光学设备中的单通行参数降低转换，我们证明了在薄膜锂锂锂带载的波导中的picsecond脉冲的正交挤压。对于小于0.3 w的片上峰值功率，我们的量度高达-0.33 $ \ pm $ 0.07 dB的压缩，推断的芯片值为-1.7 $ \ pm $ 0.4 dB。这项工作突出了带有带状的波导平台的潜力，用于宽带挤压应用和光子量子技术的开发。
Achieving high level of pulsed squeezing, in a platform which offers integration and stability, is a key requirement for continuous-variable quantum information processing. Typically highly squeezed states are achieved with narrow band optical cavities and bulk crystals, limiting scalability. Using single-pass parametric down conversion in an integrated optical device, we demonstrate quadrature squeezing of picosecond pulses in a thin-film lithium niobate strip-loaded waveguide. For on-chip peak powers of less than 0.3 W, we measure up to -0.33$\pm$0.07 dB of squeezing with an inferred on-chip value of -1.7$\pm$0.4 dB. This work highlights the potential of the strip-loaded waveguide platform for broadband squeezing applications and the development of photonic quantum technologies.
