论文标题
量子点 /自旋Qubit
Quantum Dots / Spin Qubits
论文作者
论文摘要
半导体量子点中的旋转量表代表着构建量子计算机的固态量子台的杰出家族。当电子或孔局限于半导体中的静态电位时，它们会形成它们，从而使它们具有量化的能量谱。最简单的自旋量子量子是位于量子点中的单个电子自旋，但是已经开发了许多其他品种，其中一些包含多个量子点中的多个旋转，每个点都有不同的益处和缺点。尽管这些旋转在许多方面充当简单的量子系统，但由于其半导体环境，它们也会产生复杂的影响。它们可以通过磁场和电场来控制它们，具体取决于它们的配置，因此被磁场和电场噪声所取代，具有不同类型的自旋Qubits具有不同的控制机制和噪声敏感性。虽然初始实验主要是在砷化甘氨酸（GAAS）的材料中进行的，但硅粒子已经开发了基本发展，并研究了金属氧化物 - 甲基 - 甲壳虫（SI-MOS），硅/硅（SI/SIGE）异源结构的Qubits，以及在硅的供体。越来越多的自旋量子量子量变种已经达到了足够低的误差率，以与单量门门的量子误差校正兼容，并且已经在几种成功率或忠诚度中进行了90-95％的多个Qubit Gates。
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.
