论文标题
NDFEAS（O，H）的层间电阻率各向异性各向异性各种氢浓度
Inter- to Intra-Layer Resistivity Anisotropy of NdFeAs(O,H) with Various Hydrogen Concentrations
论文作者
论文摘要
通过分子束外延和拓扑化学反应，我们制备了nDfeas（O，h）外延薄膜，在5°情况切割MGO底物上具有各种氢浓度。通过测量沿纵向和横向方向的电阻率，获得了AB平面和C轴电阻率（\ {rho} _ab和\ {Rho} _C）。电阻率各向异性γ_ \ {rho} = \ {rho} _c \ \ \ \ {rho} _ab（o，h）的不同氢浓度与ndfeas（O，f）进行了比较。在导致超导过渡温度TC超过40 K的H浓度下，γ_\ r {HO}记录了50 K处的〜100-150。另一方面，使用最多掺杂的样品观察到低γ_\ {Rho}值9的值。 The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of相图。
With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity anisotropy γ_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γ_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low γ_\{rho} value of 9 was observed with the mostly doped sample. The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of the phase diagram.
