论文标题
INGAAS/ALGAAS量子井井激光器直接生长在轴上硅上的室温连续波动的演示（001）
Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
论文作者
论文摘要
已证明了直接在轴上硅（001）上生长的Ingaas/藻类量子井的室温连续波动。最初，在金属有机化学蒸气沉积系统中，在硅底物上生长了一个完全没有对抗域的420 nm厚的GaAS epielayer，以及其他表层，包括四组五个pheriod劳动的超层超层超晶状体和激光结构层在一组五个期间的超级层层和激光结构层中均在一层中生长。将激光器作为宽条纹Fabry-Perot制备，其条纹宽度为21.5 um，空腔长为1毫米。通常，阈值电流和相应的阈值电流密度分别为186.4 mA和867 A/CM2。激光波长约为980 nm，坡度效率为0.097 w/a，单因子输出功率为22.5 mW，注射电流为400 mA。这一进步使基于硅的单片光电子整合与量子井激光器相关，并具有增强的可行性。
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers including four sets of five-period strained-layer superlattices and the laser-structural layers were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry-Perot ones with a stripe width of 21.5 um and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.
