论文标题

高效的电磁聚合物MACH-ZEHNDER调节器的投票和浸润增强

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

论文作者

Taghavi, Iman, Dehghannasiri, Razi, Fan, Tianren, Tofini, Alexander, Moradinejad, Hesam, Efterkhar, Ali. A., Shekhar, Sudip, Chrostowski, Lukas, Jaeger, Nicolas A. F., Adibi, Ali

论文摘要

超鼻腔插槽波导被制造,用于高效,基于电极的集成 - 光检查调节器。测量结果表明,$v_πl$在1.2 v.mm以下是平衡的Mach-Zehnder调制器,使用此超鼻子插槽波导在硅充电混合式平台上使用。还获得了模拟的$v_πl$ 0.35 v.mm。除了适应标准食谱外,我们还开发了两个新型的制造工艺,以实现具有高调制灵敏度的微型设备。为了提高紧凑性并减少整体足迹,我们使用基于空气桥互连的制造方法,在厚,热流动的男子2410 E梁上受到氧化铝层保护。为了克服高电流的挑战和聚合物不完善地渗入超鼻涕的插槽中,我们使用精心设计的原子薄层TiO $ _2 $作为载液级,以提高我们的电 - 充电聚合物的投票效率。此外,还采用有限差分时间域模拟来优化Tio $ _2 $的薄层的效果。与其他未优化的情况相比,我们的峰值测得的电流降低了3倍。扫描电子显微镜图像还表明,我们获得了几乎完美的浸润。由于TIO $ _2 $层,预期的总电容量被证明可以忽略不计。实际上,将我们的Tio $ _2 $表面处理应用于我们的超鼻涕插槽,使我们能够获得10 nm Tio $ _2 $ layer的$ \ SIM $ 94%的提高的相移效率($ \ partial n / \ partial v $)。

An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.

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