论文标题
座谈会：量子异常效应
Colloquium: Quantum anomalous Hall effect
论文作者
论文摘要
量子霍尔（QH）效应，量化霍尔电阻，结合零纵向电阻，是Chern绝缘子的特征性实验指纹 - 二维物质的拓扑非平整状态，具有损失的时间转换对称性。在Chern绝缘子中，非平凡的散装带拓扑是用手性状态表达的，这些状态在没有耗散的情况下沿着样品边缘携带电流。量子异常霍尔（QAH）效应是指由于没有外部磁场而导致的QH效应，这是由于自发损坏的时间反转对称性而产生的。 The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2Te3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv ) moiré materials formed from transition metal二分法生成剂。在本文中，我们回顾了负责每类QAH绝缘子的物理机制，突出了差异和共同点，并对QAH效应的潜在应用发表了评论。
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, non-trivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2Te3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv ) moiré materials formed from transition metal dichalcogenides. In this Article, we review the physical mechanisms responsible for each class of QAH insulator, highlighting both differences and commonalities, and comment on potential applications of the QAH effect.
