论文标题

三层石墨烯/HBNMoiré超级突变性中电子相关的光谱特征

Spectroscopy Signatures of Electron Correlations in a Trilayer Graphene/hBN Moiré Superlattice

论文作者

Yang, Jixiang, Chen, Guorui, Han, Tianyi, Zhang, Qihang, Zhang, Ya-Hui, Jiang, Lili, Lyu, Bosai, Li, Hongyuan, Watanabe, Kenji, Taniguchi, Takashi, Shi, Zhiwen, Senthil, Todadri, Zhang, Yuanbo, Wang, Feng, Ju, Long

论文摘要

ABC堆叠的三角烯石墨烯/HBNMoiré超级晶格(TLG/HBN)已成为相关电子物理学的操场。我们报告了使用傅立叶转化的红外光电流光谱法对双门控TLG/HBN进行光谱测量。我们观察到Moiré迷你带之间的强烈光学跃迁,随着带门的打开,随着带隙的打开,它连续变窄,表明单个粒子带宽的降低。在价值平面频带的半填充时,在约18 meV处出现了一个宽的吸收峰,表明在新兴的mott间隙上直接的光学激发。在第一个传导带的四分之一和半填充时,在其他两个相关的绝缘状态下观察到了相似的光电流光谱。我们的发现提供了Hubbard模型的关键参数,以理解TLG/HBN中电子相关性。

ABC-stacked trilayer graphene/hBN moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hBN using Fourier transformed infrared photocurrent spectroscopy. We observed a strong optical transition between moiré mini-bands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 meV, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

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