论文标题
富含硅富含硅的光学波导的光学表征
Optical characterization of deuterated silicon-rich nitride waveguides
论文作者
论文摘要
基于化学蒸气沉积的生长技术允许灵活设计与CMOS兼容的材料。在这里，我们报告了使用血浆增强化学蒸气沉积生长的富含硅富含硅的氮化物膜。膜的线性和非线性特性是表征的。我们比较了用$ sih_4 $和$ sid_4 $生长的薄膜的1550nm波长区域的吸收，并通过实验确认，富含硅的氮化物膜以$ SID_4 $消除了相关的吸收。在膜上制造的波导进一步证明，分别具有线性和非线性折射率为2.46和$ 9.8 $ x $ 10^{ - 18} m^2 w^{ - 1} $。
Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.
