论文标题
优化堆叠半导体 - 铁磁性 - 渗透器异质结构的拓扑特性
Optimizing the topological properties of stacking semiconductor-ferromagnet-superconductor heterostructures
论文作者
论文摘要
我们研究了平面半导体 - 螺旋体异质结构的电子特性，其中薄薄的铁磁绝缘子层位于介于两者之间，充当旋转过滤屏障。我们发现，在这样的系统中，可以同时增强所有三个重要诱导的物理量的强度，即，通过外部登山，用于混合模式的Rashba旋转轨道耦合，交换耦合和超导配对势。我们的结果表明，与常规设备相比，这种堆叠的设备几何形状的特定优势。我们进一步讨论了如何优化异质结构的几何参数，并通过分析计算来补充我们的数值模拟。
We study the electronic properties of a planar semiconductor-superconductor heterostructure, in which a thin ferromagnetic insulator layer lies in between and acts as a spin filtering barrier. We find that in such a system one can simultaneously enhance the strengths of all the three important induced physical quantities, i.e., Rashba spin-orbit coupling, exchange coupling, and superconducting pairing potential, for the hybrid mode by external gating. Our results show specific advantage of this stacked device geometry compared to conventional devices. We further discuss how to optimize geometrical parameters for the heterostructure and complement our numerical simulations with analytic calculations.
