论文标题

fe $ _3 $ gete $ _2 $ van der wa waals铁磁膜的动力学上的外延增长

Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films

论文作者

Zhou, Wenyi, Bishop, Alexander J., Zhu, Menglin, Lyalin, Igor, Walko, Robert C., Gupta, Jay A., Hwang, Jinwoo, Kawakami, Roland K.

论文摘要

我们证明,动力学在Fe $ _3 $ _3 $ gete $ _2 $(FGT)van der waals(VDW)铁磁性膜的外延生长中起着重要作用。通过改变沉积率,我们控制了初始缺陷的非van der der der der der阶段的形成或抑制(fe $ _3 $ ge $ _2 $),然后才意识到VDW FGT阶段的外观增长。使用横截面扫描透射电子显微镜和扫描隧道显微镜,我们优化了FGT膜以具有原子光滑的表面和与GE(111)底物的突然接口。我们高质量材料的磁性通过磁极,磁通型和自旋极化STM研究证实。重要的是,这证明了能量和动力学的相互作用如何有助于调整墨西哥原子原子的重新蒸发速率和从卧式中的扩散率,这为范德瓦尔斯外观外观的未来研究铺平了道路。

We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.

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