论文标题
120dB可编程范围的片上脉冲发生器，用于表征铁电设备
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
论文作者
论文摘要
基于铁电薄膜的新型非易失性存储设备代表了一种有希望的新兴技术，非常适合神经形态应用。这种薄膜中的物理切换机制是铁电域的成核和生长。由于这对脉冲宽度和电压振幅都具有很强的依赖性，因此重要的是使用精确的脉冲方案对其行为进行彻底表征。在这项工作中，我们提出了一个片上120 dB的可编程范围脉冲发生器，该脉冲范围可以生成从10ns到10ms $ \ pm $ 2.5％的脉冲宽度，从而消除了设备表征设置中的RLC瓶颈。我们描述了脉冲发生器的设计，并使用数字到模拟转换器来显示如何以高精度调节脉冲宽度。最后，我们提出了使用标准180nm CMOS技术制造的从电路测量的实验结果。
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
