论文标题
在（x）ga（1-x）n太阳能电池中分级的V的建模：紧张和放松的特征的比较
Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
论文作者
论文摘要
研究了V分级INGAN太阳能电池的光学特性。分级的Ingan井结构随着依赖性组成的增加而设计，然后设计了V形图案的降低。通过极化掺杂，这自然会产生交替的P型和N型区域。单独的结构的设计是通过改变含量从GAN到最大鉴赏浓度的含量从20％到80％，同时保持恒定的总体结构厚度为100 nm。考虑到完全紧张和松弛条件下的太阳能电池参数。结果表明，在完全紧张的条件下，最大效率为5.5％，发生在x = 60％。在松弛条件下的太阳能电池效率在90％时增加到8.3％。尽管Vegards Law在宽松的条件下预测了BandGap，但类似法律的Vegard是从NextNano的凭经验确定的，以在组成方面变化，以便计算菌株下的太阳能电池参数。
The optical properties of V graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a V shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 80%, while maintaining a constant overall structure thicknesses of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of 5.5%, under fully strained condition occurs at x=60%. Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% at 90%. While Vegards law predicts the bandgap under relaxed conditions, a Vegard like law is empirically determined from the output of Nextnano for varying In compositions in order to calculate solar cell parameters under strain.
