论文标题
以$ν= 2 $平衡在外延石墨烯$ p-n $交界处获得的非规定量化大厅电阻
Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions
论文作者
论文摘要
我们已经证明了使用简单的紫外线光刻的单层外延石墨烯$ p-n $接线设备的毫米规模制造，从而与通常用于获得锋利连接的电子光束光刻相比，显着缩短了设备的处理时间。这项工作介绍了典型量化霍尔电阻的非惯例的分数倍数，$ν= 2 $（$ r_h \ y \12906Ω$），该表现为：$ \ frac {a} {a} {b} r_h $。在这里，已经观察到$ a $ a和$ b $要使用1、2、3和5之类的值，以形成$ r_h $的各种系数。此外，我们还提供了一个框架，用于使用LTSpice电路模拟器探索未来的设备配置，以了解人们可能能够测量的可用分数。这些结果支持了大幅简化设备处理时间的潜力，并且可以用于许多其他二维材料。
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.
