论文标题

二相限制氮化铬薄膜中的金属绝缘体相变

Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films

论文作者

Biswas, Bidesh, Chakraborty, Sourjyadeep, Joseph, Anjana, Acharya, Shashidhara, Pillai, Ashalatha Indiradevi Kamalasanan, Narayana, Chandrabhas, Bhatia, Vijay, Garbrecht, Magnus, Saha, Bivas

论文摘要

硝酸铬(CRN)是一种众所周知的硬涂料,由于其高硬度,高温度稳定性和耐腐蚀特性,它在磨损和耐磨损的切割工具,轴承和摩擦学应用中都有应用。近年来,由于其高电离功率因子以及其独特而有趣的金属 - 绝缘体相变,CRN也引起了浓厚的兴趣。虽然CRN大量单晶在〜260-280K时表现出具有特征性的金属绝缘体过渡,并伴随着结构性(原骨到摇滚)和磁性(抗磁性至paramagnetic)过渡,但在薄纤维CRN中的这种相变的观察和高度争议。在这项工作中,证明了在生长过程中二级金属CR2N相的形成,可以抑制CRN薄膜中金属 - 绝缘体相变的观察。当沉积过程中的Cr升压降低到临界极限以下时,可重复显示相变的外延和化学计量的CRN薄膜。在减少NH3环境内的混合膜的退火将CR2N转化为CRN,并且出现了〜277 K时的电阻率不连续性,这支持了基本假设。清楚地证明了CRN薄膜中金属 - 绝缘体过渡的争议背后的起源标志着显着的进步,并能够实现其纳米级设备。

Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.

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