论文标题

介电介电常数,电导率和硝酸硼的分解场

Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride

论文作者

Pierret, A., Mele, D., Graef, H., Palomo, J., Taniguchi, T., Watanabe, K., Li, Y., Toury, B., Journet, C., Steyer, P., Garnier, V., Loiseau, A., Berroir, J-M., Bocquillon, E., Fève, G., Voisin, C., Baudin, E., Rosticher, M., Plaçais, B.

论文摘要

鉴于在2D材料电子中广泛使用六角硼(HBN),因此在低场介电常数和高场强度和电导率上,以直至击穿电压为止,完善其介电表征。本研究旨在使用DC和RF传输在两个Au-Hbn-AU电容器系列中填补这一空隙,这些电容器在10--100 nm范围内,由大型高压,高温(HPHT)晶体和一个聚合物衍生陶瓷(PDC)晶体制成。我们推断出平面外低场介电常数$ε_\ Parallel = 3.4 \ pm0.2 $与Ohba等人的理论预测一致,该预测缩小了公认的窗口$ε_\ parallel = 3 $ - $ 4 $。发现高景的DC电流泄漏遵守热激活的陷阱辅助电子传输的Frenkel-Pool法律,并具有动态介电常数$ε_\ simeq3.1 $和TRAP ENEME $ $ $ $ $ $ $ $ simeq1._b \ simeq1.3 \; \ Mathrm {EV} $ {EV} $ comportion distry distry distry distry distry distry distry niel

In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.

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