论文标题
penrose瓷砖上的掺杂的莫特绝缘子
Doped Mott insulator on Penrose tiling
论文作者
论文摘要
我们研究了载体掺杂莫特绝缘子对penrose瓷砖的影响，旨在阐明准二氧化和强电子相关性之间的相互作用。我们在数值上求解了真实空间动态均值场理论中的penrose砖结构上的哈伯德模型，该模型可以处理描述莫特绝缘体和空间不均匀性所需的奇异自我能源。我们发现，强相关效应产生的电荷分布无法通过静态均值近似。在一个小的掺杂区域中，光谱显示了在费米能量上方的位点依赖性间隙，该间隙是由莫特物理学出现的奇异大的自我能源产生的，并被视为在方形沿距离Hubbard Hubbard模型中观察到的动量依赖性pseudogap的真实空间对应物。
We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling structure within a real-space dynamical mean-field theory, which can deal with a singular self-energy necessary to describe the Mott insulator and spatial inhomogeneity. We find that the strong correlation effect produces a charge distribution unreachable by a static mean-field approximation. In a small doping region, the spectrum shows a site-dependent gap just above the Fermi energy, which is generated by a singularly large self-energy emergent from the Mott physics and regarded as a real-space counterpart of the momentum-dependent pseudogap observed in a square-lattice Hubbard model.
