论文标题
磁盘掺杂bi $ _ {2} $ te $ _ {3} $
Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$
论文作者
论文摘要
我们已经对钯（PD）掺杂拓扑绝缘子PD $ _ {X} $ _ $ _ {2} $ _ {2} $ te $ _ {3} $ _ {3} $（0 $ \ leq $ x $ x $ x $ x $ x 0.20）进行了磁通和高分辨率的光电光谱（ARPES）测量。我们已经观察到了异常高的磁化值（$ \ sim $ 1500％）和移动性（$ \ sim $ 93000 cm $^{2} $ v $^{ - 1} $ s $ s $^{ - 1} $在Pristine Bi2Te的低温下，Pristine Bi2Te3降低了Pd poping的降低。已经检测到x = 0.05、0.10的shubnikov-de haas（SDH）振荡，证实了这些样品的2D拓扑表面状态（TSSS）的存在。大厅的测量显示了原始bi $ _ {2} $ te $ _ {3} $的N型电荷载体的跨界车，到PD掺杂后的P-Type荷载载流子。 ARPES的测量表明，传统带的原始BI $ _ {2} $ te $ _ {3} $的费米水平以及TSSS和散装衍生的Valence频段的Dirac点表明，在PD掺杂pd light thig Band Light Light tike to the of sim x $ sim $ sim $ 0.10 $ 0.10。基于从SDH和ARPES测量值获得的参数的比较，磁电流测量值的KF值的降低可能是由于Schottky屏障引起的频带弯曲而可能引起的。
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.
