论文标题
Cu的黑磷N型掺杂：微观表面研究
Black Phosphorus n-type doping by Cu: a microscopic surface investigation
论文作者
论文摘要
我们在室温下使用扫描隧道显微镜（STM）和光谱法（STS）研究了铜片的表面电荷转移掺杂。隧道光谱揭示了Cu岛的对应关系的差距，这归因于库仑封锁现象。此外，使用跨铜岛的线光谱测量，我们利用了局部研究的潜力，表明铜的N型掺杂效应对BP的兴奋剂效应短。这些实验结果通过第一原理模拟证实，这可以量化簇大小在有效的BP掺杂型N型掺杂中的作用，并通过从铜簇驱动的基础层中最高的BP层的电子解耦来解释库仑阻断。我们的结果提供了新颖的理解，很难通过运输测量值，铜掺杂BP，这似乎有望实施BP中的超呈P-N连接。
We study surface charge transfer doping of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type doping effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type doping of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the doping of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP.
