论文标题

通过在半学中调整磁势来识别拓扑状态的指纹:拓扑半手pt1-xauxlusb的情况

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

论文作者

Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennacchio, Daniel, Wilson, Nathaniel, Dong, Jason, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, Palmstrom, Christopher J.

论文摘要

拓扑材料通常表现出非常线性的,非饱和磁阻(LMR),这既是科学和技术重要性。然而,拓扑非平凡的状态在这种行为的出现中的作用已经在实验中揭示了明确的证明。在这里,通过将拓扑表面状态(TSS)和大容量载体之间的耦合减少,我们可以控制PT1-Xauxlusb中的LMR行为为霍尔电阻中的不同高原,这是量子厅阶段引起的。这使我们能够揭示Landau水平的涂抹(否则会导致量子霍尔阶段)如何导致LMR行为,因为TSS与正g因子和散装载体之间的强烈相互作用。我们确定在拓扑材料中控制表面和散装载体之间的耦合强度可能会带来其磁转运行为的巨大变化。此外,我们的工作概述了一种策略,揭示了具有半金属散装带结构的化合物中TSS的宏观物理可观察物,就像多功能助母子化合物中的情况一样,从而为它们在混合量子结构中的利用打开了机会。

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

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