论文标题
180nm，90nm和45nm技术的两阶段超低阈值运营放大器的设计和比较分析
Design and Comparative Analysis of a Two-Stage Ultra-Low-Power Subthreshold Operational Amplifier in 180nm, 90nm, and 45nm technology
论文作者
论文摘要
在本文中，设计了一个两阶段的超低功率操作放大器，并在180nm，90nm和45nm CMOS技术之间介绍了拟议的子阈值互补放大器的比较分析。在几个不同的参数上比较了提出的操作放大器，以确定最佳设计。它的最大增益约为75 dB，相位边缘为76°，仅耗散140nW，电源电压为0.5 V，非常适合需要低功率和高增益的生物医学应用。提出的操作放大器是使用基于香料的电路模拟器设计的。
In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed operational amplifier is compared across several different parameters to determine the optimal design. It achieves a maximum gain of around 75 dB and a phase margin of 76°, dissipating just 140nW with a supply voltage of 0.5 V which is well suited for biomedical applications that require low power and high gain. The proposed operational amplifier has been designed using a SPICE-based circuit simulator.
