论文标题

金属氧化物备再次响应的频率响应

Frequency Response of Metal-Oxide Memristors

论文作者

Manouras, Vasileios, Stathopoulos, Spyros, Garlapati, Suresh Kumar, Serb, Alex, Prodromakis, Themis

论文摘要

在过去的十年中,回忆录一直处于纳米电子研究的最前沿,为可重新配置的计算提供了宝贵的组成部分。他们的属性已被广泛研究,并以静态方式利用其依赖于州的可编程性的应用程序进行了广泛的研究。但是,基于备忘录的交流电路的实际应用相当稀疏,在文献中只有几个示例在较高的频率下模拟它们的使用。在这项工作中,我们研究了从10^3到10^7 Hz的AC扰动下金属氧化物备再次驱动器的行为。发现金属氧化物的备忘录以RC低通滤波器的形式行为,并且在切换状态时会出现可变的截止频率,因此在用作过滤器时提供了可重构性的窗口。我们在不同的材料系统上进一步研究了这种行为,我们表明,可以通过修改设备的电容来量身定制设备的可用可重配性窗口,以包含特定的频率范围。这项研究通过表征其频率依赖性特征,从而为它们在可重新配置的交流电路中提供了有用的见解,从而扩展了对金属氧化物回忆录的当前知识。

Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based AC circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under an AC perturbation in a range of frequencies, from 10^3 to 10^7 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behaviour across distinct material systems and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterising their frequency dependent characteristics, providing useful insights for their use in reconfigurable AC circuits.

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