论文标题
探测宽带隙半导体中的亚稳态空间电势
Probing metastable space-charge potentials in a wide bandgap semiconductor
论文作者
论文摘要
尽管对空间电势的研究具有悠久的历史，但当前的模型主要基于稳态平衡的概念，不适合描述具有中度至低浓度缺陷的宽带隙半导体。在这里，我们建立在钻石的颜色中心上，既可以将载体注入晶体，并在存在外部和内部电势的情况下传播时探测它们的进化。我们目睹了亚稳态电荷模式的形成，这些电荷模式可以通过载体注入和施加电压来设计其形状和伴随的场。在先前制作的电荷模式的帮助下，我们在局部和扩展空间充电场之间展开了丰富的相互作用，然后我们利用这些相互作用来显示空间充电引起的载体引导。
While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape - and concomitant field - can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space charge field, which we then exploit to show space-charge-induced carrier guiding.
