论文标题
基板界面上的化学成分控制是FESE薄膜生长的关键
Chemical composition control at the substrate interface as the key for FeSe thin film growth
论文作者
论文摘要
FESE的二元化合物所产生的强烈迷恋要求可靠的工程方案和更有效的方法来诱导FESE薄膜中的超导性。我们的研究介绍了脉冲激光沉积的特殊性，这些脉冲激光沉积确定了FESE薄膜的生长，并着重于膜/底物界面，这是与外延生长相匹配的域趋势，也是化学异质性的缺点。我们提出，底物表面的均质化可以改善化学计量，质地和纳米质的控制，即使在超薄FESE膜中也有利于超导性。 FESE/FE/MGO中的受控界面展示了原理证明。
The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition which determine FeSe thin film growth and focuses on the film/substrate interface, the tendency for domain matching epitaxial growth but also the disadvantage of chemical heterogeneity. We propose that homogenization of the substrate surface improves the control of stoichiometry, texture, and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. The controlled interface in FeSe/Fe/MgO demonstrates the proof-of-principle.
