论文标题
金属间的半赫斯勒化合物中电子相关性的重要性
Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds
论文作者
论文摘要
HFNISN的低温扫描隧道光谱显示在费米水平周围的V^M（M <1）零偏置异常。众所周知，具有分数功率定律形状状态的局部密度是电子相关性的结果。为了进行比较，我们还测量了具有18个价电子的其他半赫斯勒化合物的隧道电导。 ZRNIPB显示了状态的金属状局部密度，而ZrcosB和NBFESB显示线性和V^2异常。对这些异常的一种解释是，相关差距在这些化合物中打开。通过分析HFNISN的磁阻，我们证明在低温下，电子电子散射占主导地位。电导率的T^M（M <1）温度依赖性证实了电子相关性是批量而不是表面特性。
Low temperature scanning tunneling spectroscopy of HfNiSn shows a V^m(m < 1) zero bias anomaly around the Fermi level. This local density of states with a fractional power law shape is well known to be a consequence of electronic correlations. For comparison, we have also measured the tunneling conductances of other half-Heusler compounds with 18 valence electrons. ZrNiPb shows a metal-like local density of states, whereas ZrCoSb and NbFeSb show a linear and V^2 anomaly. One interpretation of these anomalies is that a correlation gap is opening in these compounds. By analyzing the magnetoresistance of HfNiSn, we demonstrate that at low temperatures, electron-electron scattering dominates. The T^m(m < 1) temperature dependence of the conductivity confirms that the electronic correlations are a bulk rather than a surface property.
