论文标题
在Schmid转变处的transmon的临界荧光
Critical fluorescence of a transmon at the Schmid transition
论文作者
论文摘要
我们通过嵌入在高阻抗电路中的跨量子Qubit研究了非弹性微波光子散射。在达到临界值的阻抗时，Transmon经历了电荷 - 平局（SCHMID）过渡。由于独特的透射水平结构，荧光光谱带有过渡点的特征。在高回路阻抗下，绝对散射横截面的主要部分可能解释了准射流光子散射。我们发现其依赖于量子和电路参数。
We investigate inelastic microwave photon scattering by a transmon qubit embedded in a high-impedance circuit. The transmon undergoes a charge-localization (Schmid) transition upon the impedance reaching the critical value. Due to the unique transmon level structure, the fluorescence spectrum carries a signature of the transition point. At higher circuit impedance, quasielastic photon scattering may account for the main part of the inelastic scattering cross-section; we find its dependence on the qubit and circuit parameters.
