论文标题
In/Si（111）原子线阵列中局部相缺陷的双重性质：杂质和短拓扑孤子
Dual nature of localized phase defects in the In/Si(111) atomic wire array: impurities and short topological solitons
论文作者
论文摘要
我们证明了在准一维电荷密度波系统中存在原子尺寸的拓扑孤子：Si上的im依原子线（111）。进行关节扫描隧道显微镜和密度功能的计算，我们表明表面中的Si（111） - （8x2）具有两种概念上不同类型的突然相位翻转结构。一种是由Adatoms引起的，因此本质上是非统一的。另一个是突然的左手孤子。
We demonstrate the existence of atomically-sized topological solitons in a quasi one-dimensional charge density wave system: indium atomic wires on Si(111). Performing joint scanning tunneling microscopy and density-functional calculations, we show that the Si(111)-(8x2)In surface features two conceptually different types of abrupt phase flip structures. One is caused by In adatoms and is, hence, non-solitonic in nature. The other one is an abrupt left-chiral soliton.
