论文标题
在平面GE孔气体中增强接近性诱导的超导性
Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas
论文作者
论文摘要
平面锗中的孔气体可以与强旋轨相互作用和可调的G因子结合使用，因此成为了创建混合超导型 - 触发器式设备的有希望的平台。对基于混合GE的量子技术的关键挑战是设计高质量界面和超导接触的设计，这些接触符合磁场。在这项工作中，通过将铝的资产结合在一起，该铝提供了与GE良好接触的铝和具有明显的超导间隙的Niobium，我们证明了具有相对较大的\ iCrn \产品，具有相对较大的\ iCRN \产品，能够具有高磁场。我们还展示了相位偏置单个jofet的能力，开辟了一条途径，以探索平面GE中的拓扑超导性。超过1.8特斯拉以上的杂种设备中超导性的持久性铺平了在同一芯片上整合自旋量子和接近性诱导的超导性的道路。
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
