论文标题
超高密度3D垂直RRAM，带有无连接的纳米线，用于内存计算应用
Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications
论文作者
论文摘要
Von-Neumann瓶颈是数据密集型应用程序的明显限制，将内存计算（IMC）解决方案推向了前方。由于大型数据集通常存储在非易失性记忆（NVM）中，因此基于新兴的记忆（例如Oxram）提出了各种溶液，该记忆主要依赖于饥饿的地区，一个晶体管（1T）一个Oxram（1R）位细胞。为了解决该区域问题，在保持1T1R位细胞提供的编程控制的同时，我们建议将无数堆叠的无连接纳米线（1JL）和Oxram（1R）技术组合起来，以创建3-D存储柱与超高密度。纳米线连接无连接晶体管已被制造，表征和模拟，以定义整个支柱的当前状况。最后，基于具有集成电路重点（SPICE）模拟的仿真程序，我们证明了成功搜索逻辑操作最多三柱层，每层操作数为一层。
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while keeping the programming control provided by 1T1R bit-cell, we propose to combine gate-all-around stacked junctionless nanowires (1JL) and OxRAM (1R) technology to create a 3-D memory pillar with ultrahigh density. Nanowire junctionless transistors have been fabricated, characterized, and simulated to define current conditions for the whole pillar. Finally, based on Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, we demonstrated successfully scouting logic operations up to three-pillar layers, with one operand per layer.
