论文标题
基于硅的中型红外光电探测器通过TE超重培训实现
Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping
论文作者
论文摘要
基于SI的光电探测器满足了低成本和环境友好的标准，并且可以使片上互补的金属氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 稳定光子系统的发展。但是，由于SI的固有带隙，将其室温光响应扩展到中波长红外（MWIR）方案仍然具有挑战性。在这里，我们报告了一项基于TE的SI高填充的室温MWIR光电探测器的全面研究。所证明的MWIR P-N光电二极管表现出比在1.0-1.9μm的波长范围内的商业设备相比，光谱光响应高达5μm，检测器性能略低。我们还研究了背景噪声与te杂化的Si光电二极管的敏感性之间的相关性，其中发现最大的室温特异性检测率为3.2 x 10^12 cmhz^{1/2} w^{ - 1} w^{ - 1}和9.2 x 10^8 cmhz^{1^8 cmhz^{1/2} at {1/2}这项工作有助于建立在室温下运行的基于SI的宽带红外光子系统。
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 μm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 μm. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 μm and 1.55 μm, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature.
