论文标题
用Bremsstrahung样过程和多体效应来描述Migdal效应
Describing the Migdal effect with a bremsstrahlung-like process and many-body effects
论文作者
论文摘要
最近的理论研究表明，突然被暗物质（DM）粒子击中的原子更有可能激发或失去其电子的可能性比预期的要比预期的。这种Migdal效应为探索子GEV DM颗粒提供了新的途径。已经有各种尝试描述液体和半导体靶标的Migdal效应。在本文中，我们结合了Bremsstrahung工艺的处理和电子多体效应，以完整描述散装半导体目标钻石和硅的Migdal效应。与在紧密结合（TB）近似框架下使用以原子为中心的局部威尼斯函数（WFS）获得的结果相比，由于$ω^{ - 4} $ scaleing，这项研究中提出的方法在低能量状态下的事件速率在低能状态下产生了较大的事件率。我们还发现，介导后离子和电子孔对之间库仑相互作用的bremsstrahung光子的效果与单个声子的交换等效。
Recent theoretical studies have suggested that the suddenly recoiled atom struck by dark matter (DM) particle is much more likely to excite or lose its electrons than expected. Such Migdal effect provides a new avenue for exploring the sub-GeV DM particles. There have been various attempts to describe the Migdal effect in liquids and semiconductor targets. In this paper we incorporate the treatment of the bremsstrahlung process and the electronic many-body effects to give a full description of the Migdal effect in bulk semiconductor targets diamond and silicon. Compared with the results obtained with the atom-centered localized Wannier functions (WFs) under the framework of the tight-binding (TB) approximation, the method proposed in this study yields much larger event rates in the low energy regime, due to a $ω^{-4}$ scaling. We also find that the effect of the bremsstrahlung photon mediating the Coulomb interaction between recoiled ion and the electron-hole pair is equivalent to that of the exchange of a single phonon.
