论文标题
单光功率和低温下沉积的Si和GE薄膜电介质中的低微波损失
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
论文作者
论文摘要
我们的研究表明，沉积的GE和SI介电薄膜可以在接近单光子的功率和亚kelvin温度下表现出低的微波损失（$ \ $ \ $ 40 mk）。这种低损失使它们能够在各种设备中使用，包括低损坏的共面，微带和带状线的谐振器，以及用于隔离设备隔离，间隔电介质的层以及微波炉和Josephson交界处的钝化。我们使用Coplanar微波谐波谐振器结构，其狭窄的痕量宽度为2-16 $μ\ textrm {M} $，以最大程度地提高损失切线测量对沉积介电介质的界面和特性的敏感性，而不是优化质量因子。 In this configuration, thermally-evaporated $\approx 1 μ\textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 μ\textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single光子损失切线为$ 0.6-2 \ times 10^{ - 5} $。界面污染限制了这些设备的损失。
Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $μ\textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1 μ\textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 μ\textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Interface contamination limits the loss in these devices.
