论文标题
Clictd整体CMOS传感器
The CLICTD Monolithic CMOS Sensor
论文作者
论文摘要
ClictD是一种单片硅像素传感器，该传感器在经过修改的180 nm CMOS成像过程中制造，具有小收集电极设计和高抗性的外延层。它具有创新的子像素分割方案，并针对快速电荷收集和高空间分辨率进行了优化。开发该传感器是为了针对拟议的未来紧凑型线性碰撞器（CLIC）的跟踪检测器的要求。最值得注意的是，需要一些纳秒的时间分辨率和低于7微米的空间分辨率。在这项贡献中，在梁测试中测量的传感器性能呈现，重点是使用具有不同厚度的组件（降至50微米以最小化材料预算）和倾斜的粒子轨道。
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 microns to minimize the material budget) and inclined particle tracks.
