论文标题
X射线光电子光谱法参与Ti/Si3n4的热驱动化学动力学的界面研究
Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy
论文作者
论文摘要
在高温退火期间，在金属基层组件中的扩散介导的相互作用会导致可能形成新的复合材料。在这里，据报道，在SI3N4/SI底物上的溅射成年Ti膜可在650°C及以上的温度下进行高真空退火过程，同时在高真空退火过程中产生硝酸钛和硅化二元复合材料。通过X射线照相电子光谱探测了热分解的Si和N原子与SI3N4及其随后的化学反应的扩散。为了在800°C及以上退火，大多数SI原子都表现出保持元素形式的偏好，而不是与Ti一起发展硅化相。而在较低的退火温度下，硅化剂成为分解的Si原子的主要相。但是，氮原子与Ti和形成锡迅速反应，这是每个研究的退火温度的多数阶段。此外，已定量地比较了膜上各种退火温度的氮化物和硅化相，并且在780°C下退火的样品观察到了最大硅质形成。最后，可以利用热锚定的金属覆盖物相互作用机制将其用于制造无序的超导锡膜，其中Tisi2和Si可以通过改变退火温度来调节疾病水平。
Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium nitride and silicide based binary composites while undergoing high vacuum annealing process at temperatures 650°C and above. Diffusion of thermally decomposed Si and N atoms from Si3N4 and their subsequent chemical reaction with Ti have been probed by X-ray photo electron spectroscopy. For annealing at 800°C and above, most of the Si atoms show preferences to stay in elemental form rather than developing silicide phase with Ti. Whereas at lower annealing temperature, silicide becomes the dominant phase for decomposed Si atoms. However, N atoms react promptly with Ti and form TiN which appears as the majority phase for each of the studied annealing temperature. Further, the nitride and silicide phases across the films have been compared quantitatively for various annealing temperature and the maximum silicide formation is observed for the sample annealed at 780°C. Finally, the thermally anchored metal-substrate interaction mechanism can be exploited to fabricate disordered superconducting TiN films where TiSi2 and Si can be used to tune the level of disorder by altering the annealing temperature.
