论文标题
三端磁性隧道连接中的自旋轨道扭矩和自旋传输扭矩开关的单发动力学
Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
论文作者
论文摘要
电流诱导的自旋转移扭矩（STT）和自旋轨道扭矩（SOT）使磁性隧道连接（MTJS）在非挥发性磁性随机访问记忆中的电气开关。为了开发更快的内存设备，需要改进当前驱动磁化动力学的时间尺度。在这里，我们报告了由SOT在三端MTJ设备中驱动的磁化反转的全电时间分辨测量。当前注射过程中MTJ抗性的单发测量表明，SOT切换涉及由域成核时间和传播时间组成的随机两步过程，这些过程具有不同的起源，时间表和统计分布，与Stt开关相比。我们进一步表明，SOT，STT和电压控制的磁各向异性（VCMA）的组合导致可重复的子NS切换，而累积切换时间的扩散小于0.2 ns。我们的测量结果揭示了SOT，STT和VCMA在确定MTJ设备的开关速度和效率方面的综合影响。
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices.
