论文标题

Quasiperiodicity,带拓扑和Moiré石墨烯

Quasiperiodicity, band topology, and moiré graphene

论文作者

Mao, Dan, Senthil, T.

论文摘要

许多Moiré石墨烯系统具有几乎平坦的拓扑带,其中电子运动密切相关。尽管这些系统在显微镜上只是准碘,但通常可以将它们视为不变的转换为出色的近似值。在这里,我们重新考虑了这个问题的魔术角扭曲双层石墨烯,该石墨烯几乎与六角硼(H-BN)底物对齐。我们仔细研究了H-BN引起的周期性潜力对低能物理学的影响。该电位和由扭曲石墨烯产生的Moiré晶格的组合产生了一个准周期性项,取决于H-BN和Moiré石墨烯之间的比对角。我们发现,对齐角对靠近电荷中立的带隙和电气传输的行为都有重大影响。我们还介绍和研究玩具模型,以说明准周期潜力如何导致拓扑带的运输特性的定位和变化。

A number of moiré graphene systems have nearly flat topological bands where electron motion is strongly correlated. Though microscopically these systems are only quasiperiodic, they can typically be treated as translation invariant to an excellent approximation. Here we reconsider this question for magic angle twisted bilayer graphene that is nearly aligned with a hexagonal boron nitride(h-BN) substrate. We carefully study the effect of the periodic potential induced by h-BN on the low energy physics. The combination of this potential and the moiré lattice produced by the twisted graphene generates a quasi-periodic term that depends on the alignment angle between h-BN and the moiré graphene. We find that the alignment angle has a significant impact on both the band gap near charge neutrality and the behavior of electrical transport. We also introduce and study toy models to illustrate how a quasi-periodic potential can give rise to localization and change in transport properties of topological bands.

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