论文标题
石墨烯中的电荷载体密度噪声：局部/离域陷阱的影响
Charge carrier density noise in graphene: effect of localized/delocalized traps
论文作者
论文摘要
基于石墨烯的设备在几种电子传输特性（例如移动性和电荷载体浓度）中显示出$ 1/f $低频噪声。集成到电路量子电动力学系统中的基于石墨烯的设备的实验研究的最新爆发使人们对低频电荷噪声的兴趣重新点燃了兴趣。我们研究了McWorther模型中石墨烯中的电载体密度噪声，其中底物中的电子陷阱诱导噪声。我们专注于大型掺杂制度，并根据陷阱状态的单个/双自旋占用率引入了对局部/离域陷阱效果的简单模型。我们发现，在这两种情况下，石墨烯的电荷载体光谱都要服从$ 1/f^α$ power-law行为，其中$α$非常接近统一，并且在每种情况下，我们都会评估偏差$β= 1-α$。发现噪声的幅度取决于陷阱能量分布和温度。陷阱状态的单个/双自旋占用率仅影响噪声幅度对二阶的温度依赖性。
Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into circuit quantum electrodynamics systems has rekindled the interest in low-frequency charge noise. We investigate charge carrier density noise in graphene within the McWorther model where noise is induced by electron traps in the substrate. We focus on the large doping regime and introduce a simple modelization of the effect of localized/delocalized traps in terms of single/double spin occupancy of trap states. We find that in both cases the charge carrier spectrum of graphene obeys the $1/f^α$ power-law behavior where $α$ is very close to the unity, and for each case we evaluate the deviation $β=1-α$. The amplitude of the noise is found to depend on the trap energy distribution and on temperature. Single/double spin occupancy of trap states influences the temperature dependence of noise amplitude only to second order.
